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1SS387

SURFACEMOUNTFASTSWITCHINGDIODE

SiliconEpitaxialPlanarDieConstruction FastSwitchingSpeed SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

1SS387

HighSpeedSwitchingDiode

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

1SS387

TOSHIBADiodeSiliconEpitaxialPlanarType

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

1SS387

HighSpeedSwitchingDiode

DSK

Diode Semiconductor Korea

1SS387

HighSpeedSWITCHINGDiode

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

1SS387

HighSpeedSwitchingDiode

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

1SS387

Lowforwardvoltage

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

1SS387

TOSHIBADiodeSiliconEpitaxialPlanarType

SwitchingDiodesSiliconEpitaxialPlanar Features (1)Smallpackage (2)Lowforwardvoltage:VF(3)=0.98V(typ.) (3)Fastreverserecoverytime:trr=1.6ns(typ.) (4)Smalltotalcapacitance:Ct=0.5pF(typ.) Applications •Ultra-High-SpeedSwitching

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

1SS387

HighSpeedSwitchingDiodes

HighSpeedSwitchingDiodes Features Lowforwardvoltage. Fastreverserecoverytime. Smalltotalcapacitance. Applications —High-speedswitchinginsurfacemountedcircuits. —

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

1SS387

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication Compact2-pinpackage–idealforhigh-densitymounting Lowforwardvoltage:VF(3)=0.98V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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