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1SS352

SiliconEpitaxialPlanarSwitchingDiode

Features •Lowforwardvoltage •FastReverseRecoveryTime •SmallTotalCapacitance Application •Ultrahighspeedswitching

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

1SS352

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication •Smallpackage •Lowforwardvoltage:VF(3)=0.98V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

1SS352

SILICONEPITAXIALPLANARDIODE

SILICONEPITAXIALPLANARDIODE Features •Lowforwardvoltage •FastReverseRecoveryTime •SmallTotalCapacitance Application •Ultrahighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1SS352

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONDIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONDIODE Features SmallPackage Lowforwardvoltage:VF(3)=0.98(Typ) Fastreverserecoverytime:trr=1.6ns(Typ) Smalltotalcapacitance:CT=0.5pF(Typ)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

1SS352

UltraHighSpeedSwitchingApplication

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

1SS352

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication •Smallpackage •Lowforwardvoltage:VF(3)=0.98V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.) •Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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