1N6629US分立半导体产品的二极管-整流器-单规格书PDF中文资料

1N6629US属于分立半导体产品的二极管-整流器-单。由美高森美半导体公司制造生产的1N6629US二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

DESCRIPTION

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US).

FEATURES

• Popular JEDEC registered 1N6626 to 1N6631 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, and JANTXV available per MIL-PRF- 19500/590

• Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6626, SP6629, etc.

• Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US)

APPLICATIONS / BENEFITS

• Ultrafast recovery rectifier series 200 to 1000 V

• Military and other high-reliability applications

• Switching power supplies or other applications requiring extremely fast switching & low forward loss

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power capability

• Inherently radiation hard as described in Microsemi MicroNote 050