BIDIRECTIONAL TRANSIENT SUPPRESSORS

BIDIRECTIONAL TRANSIENT SUPPRESSORS

文件：104.01 Kbytes 页数：2 Pages

Microsemi

美高森美

500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS

AXIAL LEADED, HERMETICALLY SEALED, 500 WATT TRANSIENT VOLTAGE SUPPRESSORS • Low dynamic impedance • Hermetically sealed in Metoxilite fused metal oxide • 500 Watt peak pulse power • 1.5 Watt continuous • Available in JAN, JANTX and JANTXV versions

文件：111.42 Kbytes 页数：3 Pages

SEMTECH

先之科

500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS

500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS

文件：151.57 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Axial Leaded, Hermetically Sealed, 500 Watt Transient Voltage Suppressors

Semtech

先之科

Package：轴向；包装：散装 类别：电路保护 TVS - 二极管 描述：TVS DIODE 6.2VWM 12.7VC AXIAL

SEMTECH

先之科

Package：B，轴向；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：TVS DIODE 6.2VWM 12.71VC AXIAL

Microchip

微芯科技

TRANSIENT VOLTAGE SUPPRESSER DIODES

Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -55°C to +175°C

文件：55.56 Kbytes 页数：2 Pages

SENSITRON

BIDIRECTIONAL TRANSIENT SUPPRESSORS

BIDIRECTIONAL TRANSIENT SUPPRESSORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件：453.11 Kbytes 页数：3 Pages

DIGITRON

HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS

FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION. • SUBMINIATURE. • METALLURGICALLY BONDED. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • DYNAMIC IMPEDANCE AND REVERSE LEAKAGE LOWEST AVAILABLE

文件：89.67 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

QPL 500 Watt Axial Leaded TVS

DESCRIPTION The 1N61xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. These devices are constructed using two p-n junction TVS diodes in a back-to-back

文件：31.03 Kbytes 页数：2 Pages

SEMTECH

先之科