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1N5832

SiliconPowerSchottkyDiode

GENESIC

GeneSiC Semiconductor, Inc.

1N5832

SchottkyPowerDiode,40A

NAINA

Naina Semiconductor ltd.

1N5832

NotESDSensitive

Features •HighSurgeCapability •Typesfrom20Vto40VVRRM •NotESDSensitive

GENESIC

GeneSiC Semiconductor, Inc.

1N5832

40AMPSCHOTTKYRECTIFIER

40AMPSCHOTTKYRECTIFIER

DIGITRON

Digitron Semiconductors

1N5832

SchottkyBarrierRectifierDiode

NAINA

Naina Semiconductor ltd.

1N5832

GENERALPURPOSESCHOTTKYRECTIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5832

40AmpSchottkyRectifier

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5832

SCHOTTKYRECTIFIER

Features •FastSwitching •Lowforwardvoltagedrop •Highsurgecapability •Highefficiency,lowpowerloss •NormalandReversepolarity

NAINA

Naina Semiconductor ltd.

1N5832

SCHOTTKYDIODESSTUDTYPE40A

Features HighSurgeCapability Typesup40VtoVRRM

TELTokyo Electron Ltd.

东电电子东京电子有限公司

1N5832

40AmpSchottkyRectifier

40AmpSchottkyRectifier •SchottkyBarrierRectifier •GuardRingProtection •LowForwardVoltage •40Amperes •125°CJunctionTemperature •VRRM20to40Volts

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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