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1N5804US

Ultrafast Recovery Rectifier

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

1N5804US

MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804US

SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804US

Superfast Recovery Diodes Surface Mount (US)

Features ‹Verylowreverserecoverytime ‹Hermeticallysealednon-cavityconstruction ‹Soft,non-snap,offrecoverycharacteristics ‹Verylowforwardvoltagedrop VR50-150V IF1N5802USto1N5806US=2.5A trr1N5802USto1N5806US=25nS IR1N5802USto1N5806US=1µA

SEMTECH

Semtech Corporation

1N5804US

Ultrafast Recovery Rectifier

SENSITRON

Sensitron

1N5804US

SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804US

Rectifier Diode Series

MA-COM

M/A-COM Technology Solutions, Inc.

1N5804US

包装:散装 封装/外壳:SQ-MELF 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE GEN PURP 100V 1.1A

SEMTECH

Semtech Corporation

1N5804US

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SQ-MELF,A 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE GEN PURP 100V 1A D5A

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5804USE3

包装:散装 封装/外壳:SQ-MELF,A 类别:分立半导体产品 二极管 - 整流器 - 单 描述:RECTIFIER UFR,FRR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5804

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804

ULTRAFASTMILITARYRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804

MILITARYAPPROVED,HIGHEFFICIENCY,2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804

UltrafastRecoveryRectifier

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

1N5804

UltrafastRecoveryRectifier

SENSITRON

Sensitron

1N5804

VOIDLESS-HERMETICALLY-SEALEDULTRAFASTRECOVERYGLASSRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5804

HIGHEFFICIENCY,ESP,K2.5AMPTO20AMP

DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5804

RECTIFIER,upto150V,2.5A,25ns

AXIALLEADEDHERMETICALLYSEALEDSUPERFASTRECTIFIERDIODE •Verylowrevserserecoverytime •HermeticalsealedinMetoxilitefusedmetaloxide •Lowswichinglosses •Soft,non-snapoff,recoverycharacteristics •Verylowforwardvoltagedrop

SEMTECH

Semtech Corporation

1N5804

RectifierDiodeSeries

MA-COM

M/A-COM Technology Solutions, Inc.

产品属性

  • 产品编号:

    1N5804US

  • 制造商:

    Semtech Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    散装

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    1.1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    25pF @ 5V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SQ-MELF

  • 描述:

    DIODE GEN PURP 100V 1.1A

供应商型号品牌批号封装库存备注价格
MSC
3162
公司现货
询价
Microsemi
1942+
N/A
154
加我qq或微信,了解更多详细信息,体验一站式购物
询价
N/A
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MICROSEMI
1809+
D-5A
326
就找我吧!--邀您体验愉快问购元件!
询价
Microchip Technology
21+
TO-247-3
21000
专业分立半导体,原装渠道正品现货
询价
MICROSEMI/美高森美
21+
D5A
6000
全新原装 现货 价优
询价
Microsemi/美高森美
22+
D5A
2897
只做原装自家现货供应!
询价
Microchip
21+
15000
只做原装
询价
MICROSEMI/美高森美
2339+
D5A
32280
原装现货 假一罚十!十年信誉只做原装!
询价
原厂原包
2022+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
询价
更多1N5804US供应商 更新时间2024-4-28 16:00:00