1N58资料使用说明书供应商报价新泽西半导体-114ic电子网

首页 >1N58>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N58	文件：44.59 Kbytes Page：1 Pages	GOLD BONDED GERMANIUM DIODE	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58010	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58011	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58012	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58013	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58014	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58015	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N58016	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5802	文件：46.75 Kbytes Page：3 Pages	2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802	文件：318.28 Kbytes Page：2 Pages	MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802	文件：133.12 Kbytes Page：3 Pages	MILITARY APPROVED, HIGH EFFICIENCY, 2.5 AMP AND 6.0 AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802	文件：204.48 Kbytes Page：3 Pages	RECTIFIER, up to 150V, 2.5A, 25ns AXIALLEADEDHERMETICALLYSEALEDSUPERFASTRECTIFIERDIODE •Verylowrevserserecoverytime •HermeticalsealedinMetoxilitefusedmetaloxide •Lowswichinglosses •Soft,non-snapoff,recoverycharacteristics •Verylowforwardvoltagedrop	SEMTECH Semtech Corporation	SEMTECH
1N5802	文件：45.34 Kbytes Page：3 Pages	Ultrafast Recovery Rectifier UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C	SENSITRON Sensitron	SENSITRON
1N5802	文件：135.3 Kbytes Page：2 Pages	HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP DESCRIPTION ThisseriesofHighEfficiencyPowerRectifiersallowscircuitdesignerstodesignhighcurrent,highfrequencysuppliesto500kHzwithverylowdiodelosses.Thehighforwardsurgecapabilitymakesthesedevicesusefulinprotectivecircuits. FEATURES ●ExceptionalEfficiency ●L	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5802	文件：573.15 Kbytes Page：4 Pages	RECTIFIERS HIGH EFFICIENCY RECTIFIERSHIGHEFFICIENCY 2.5AMPTO20AMP	DIGITRON Digitron Semiconductors	DIGITRON
1N5802-1	文件：46.75 Kbytes Page：3 Pages	2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802US	文件：318.28 Kbytes Page：2 Pages	MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802US	文件：112.74 Kbytes Page：2 Pages	SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5802US	文件：110.72 Kbytes Page：2 Pages	Superfast Recovery Diodes Surface Mount (US) Features Verylowreverserecoverytime Hermeticallysealednon-cavityconstruction Soft,non-snap,offrecoverycharacteristics Verylowforwardvoltagedrop VR50-150V IF1N5802USto1N5806US=2.5A trr1N5802USto1N5806US=25nS IR1N5802USto1N5806US=1µA	SEMTECH Semtech Corporation	SEMTECH
1N5802US	文件：45.34 Kbytes Page：3 Pages	Ultrafast Recovery Rectifier UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C	SENSITRON Sensitron	SENSITRON

12 3 4 5 6 >>>

详细参数

型号：
1N58
制造商：
NJSEMI
制造商全称：
New Jersey Semi-Conductor Products, Inc.
功能描述：
HIGH EFFICIENCY, ESP,K 2.5 AMP TO 20 AMP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	1N58	NB	23+	NA	141	专做原装正品,假一罚百!	询价
千层芯半导体(深圳)有限公司	1N5819UR-1JANTX	MICROSEMI	2018+	SMD	1680	MICROSEMI专营品牌进口原装现货假一赔十	询价
深圳市芯诚实创科技有限公司	1N5822	MIC	2022	DIP/SIP	3080	原装正品	询价
深圳市联成美业电子有限公司	1N5819HW-7-F	DIODES/美台	22+		120000		询价
深圳市华瑞顺电子科技有限公司	1N5819HW1-7-F	DIODES/美台	22+	SOD323	12680		询价
现代芯城（深圳）科技有限公司	1N5818W		23+	N/A	88000	一级代理放心采购	询价
深圳市博浩通科技有限公司	1N5819FSCT	Fairchild	23+	DO-41	7750	全新原装优势	询价
深圳市华集芯实业有限公司	1N5819HW-7-F	DIODES/美台	23+	SOD-123	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
深圳市高捷芯城科技有限公司	1N5822	YANGJIE(扬杰)	23+	DO27	8215	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市雅芯通科技有限公司	1N5817RLG	ON/安森美	24+	SMD	20000	只做原装正品上传就有货假一赔十	询价

更多1N58供应商更新时间2024-6-17 17:03:00

详细参数

相关规格书

相关库存