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1N5523

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOXKnox Semiconductor, Inc

Knox Semiconductor, Inc

1N5523

LOW VOLTAGE AVALANCHE DIODES DO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523

Low Voltage Avalanche 500 mW Zener Diodes DO-35

FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5523

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5523

包装:散装 封装/外壳:DO-204AH,DO-35,轴向 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:VOLTAGE REGULATOR

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

1N5523-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523A

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5523A

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523A

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N5523A-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523AUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523AUR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523B

LOW REVERSE LEAKAGE CHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5523B

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523B

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

1N5523B-1

LOW REVERSE LEAKAGE CHARACTERISTICS

•1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5523B-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5523BUR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

•1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

产品属性

  • 产品编号:

    1N5523

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 齐纳 - 单

  • 包装:

    散装

  • 容差:

    ±20%

  • 工作温度:

    -65°C ~ 175°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AH,DO-35,轴向

  • 供应商器件封装:

    DO-35(DO-204AH)

  • 描述:

    VOLTAGE REGULATOR

供应商型号品牌批号封装库存备注价格
APD
18+
NA
2415
进口原装正品优势供应QQ3171516190
询价
MICROSEMI
2018+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十
询价
MXD
23+
NA
682
专做原装正品,假一罚百!
询价
APD
NA
6688
10
现货库存
询价
23+
N/A
59810
正品授权货源可靠
询价
MSCI
三年内
1983
纳立只做原装正品13590203865
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
CDI-DIODE
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
MICROSEMI/美高森美
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
APD
21+
军品二级管
79
原装现货假一赔十
询价
更多1N5523供应商 更新时间2024-5-17 14:16:00