1N4686-TP

Package：DO-204AH，DO-35，轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 3.9V 500MW DO35

1N4686

SILICON250mWZENERDIODES

SILICON250mWZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

1N4686

500mWSiliconZenerDiodes

1N4686

ZenerDiode

Features ♦SiliconPlanarZenerDiodes ♦StandardZenervoltagetoleranceis±5. Othertolerancesareavailable uponrequest. ♦Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375”(9.5mm)leadlength. ♦ThesediodesarealsoavailableinSOD-123case withthetype

1N4686

LOWLEVELZENERDIODESULTRA-LOWCURRENT:50關A-LOWLEAKAGE

LOWLEVELZENERDIODES ULTRA-LOWCURRENT:50µA-LOWLEAKAGE

1N4686

50uA,LOWOPERATINGCURRENT,ZENERDIODES

•50µA,LOWOPERATINGCURRENT,ZENERDIODES •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED MAXIMUMRATINGS OperatingTemperature:-65°Cto+175°C StorageTemperature:-65°Cto+175°C PowerDissipation:500mW@+50°C DCPowerDerating:4mW/°Cabove+50°C ForwardV

1N4686

ZENERDIODES

VZ:1.8-43V PD:500mW FEATURES: *Zenervoltagespecifiedat50µA *MaximumdeltaVZgivenfrom10µAto100µA *Veryhighstability *Lownoise *Pb/RoHSFree

1N4686

50uA,LOWOPERATINGCURRENT,ZENERDIODE

1N4678thru1N4717 ●50μA,LOWOPERATINGCURRENT,ZENERDIODE ●DOUBLEPLUGCONSTRUCTION ●METALLURGICALLYBONDED

1N4686

500mWSiliconZenerDiodes

Features •ZenerVoltage1.8Vto43V •VerySharpReverseCharacteristic •VZ–tolerance±5standard •HighReliability

1N4686

500mWDO-35HermeticallySealedGlassZenerVoltageRegulators

SpecificationFeatures: ■ZenerVoltageRange=1.8Vto43V ■ESDRatingofClass3(>6KV)perHumanBodyModel ■DO-35Package(DO-204AH) ■DoubleSlugTypeConstruction ■MetallurgicalBondedConstruction ■RoHSCompliant ■SolderHotDipTin(Sn)LeadFinish SpecificationFeatures: