TCR8BM11中文资料下载供应代理东芝TOSHIBA-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TCR8BM11	文件：1.18428 Mbytes Page：15 Pages	丝印：1M1；Package：DFN5B；800 mA CMOS Ultra Low Dropout Regulator 1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that 文件：1.18428 Mbytes 页数：15 Pages	TOSHIBA 东芝	TOSHIBA
1M110Z	文件：86.97 Kbytes Page：5 Pages	Glass Passivated Junction Silicon Zener Diode Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl 文件：86.97 Kbytes 页数：5 Pages	TSC 台湾半导体	TSC
1M110Z	文件：5.31036 Mbytes Page：5 Pages	Glass Passivated Junction Silicon Zener Diode Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl 文件：5.31036 Mbytes 页数：5 Pages	TSC 台湾半导体	TSC
1M110Z	文件：348.88 Kbytes Page：5 Pages	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt FEATURES • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0 A above 11V • High temperature soldering : 260°C /10 seconds at terminals • Plastic package has Underwriters Laboratory 文件：348.88 Kbytes 页数：5 Pages	TRSYS Transys Electronics	TRSYS
1M110ZS10	文件：273.55 Kbytes Page：4 Pages	1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior cap 文件：273.55 Kbytes 页数：4 Pages	Motorola 摩托罗拉	Motorola
1M120Z	文件：86.97 Kbytes Page：5 Pages	Glass Passivated Junction Silicon Zener Diode Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl 文件：86.97 Kbytes 页数：5 Pages	TSC 台湾半导体	TSC
1M120Z	文件：5.31036 Mbytes Page：5 Pages	Glass Passivated Junction Silicon Zener Diode Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl 文件：5.31036 Mbytes 页数：5 Pages	TSC 台湾半导体	TSC
1M120Z	文件：348.88 Kbytes Page：5 Pages	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt FEATURES • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0 A above 11V • High temperature soldering : 260°C /10 seconds at terminals • Plastic package has Underwriters Laboratory 文件：348.88 Kbytes 页数：5 Pages	TRSYS Transys Electronics	TRSYS
1M120ZS10	文件：273.55 Kbytes Page：4 Pages	1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior cap 文件：273.55 Kbytes 页数：4 Pages	Motorola 摩托罗拉	Motorola
1M130Z	文件：5.31036 Mbytes Page：5 Pages	Glass Passivated Junction Silicon Zener Diode Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl 文件：5.31036 Mbytes 页数：5 Pages	TSC 台湾半导体	TSC

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技术参数

Series：
TCR8BM
Output Type：
Fixed Output
Application：
Mobile equipment/Camera/Sensor power supply/RF power supply
Feature：
Low dropout voltage/High ripple rejection ratio/Fast load transient response/Small package
Operating Output Current IOUT (Max) (mA)：
800
Operating Input Voltage VIN *(Min)：
VOUT+VDO
Operating Input Voltage VIN *(Max)：
VBIAS
Output VoltageVOUT (Typ.) (V)：
1.1
Output Voltage LineupVOUT (V)：
0.8 to 3.6
Output Voltage Accuracy (±) * (%)：
1.0
Quiescent Current (Typ.) * (μA)：
20
Stand-by Current (Typ.) * (μA)：
0.1
Dropout Voltage (Typ.) * VDO (mV)：
170
Ripple Rejection Ratio (Typ.) * R.R. (dB)：
98
Output Noise Voltage (Typ.) * VNO (μVrms)：
40
Operating Temperature (degC)：
-40 to 85
Output Capacitance COUT (μF)：
≥2.2
Overcurrent Protection：
Y
Thermal Shutdown：
Y
Auto-discharge：
Y
Inrush Current Reduction：
Y
Number of pins：
5
Package name：
DFN5B
Width×Length×Height：
1.2 x 1.2 x 0.38

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	TCR8BM11A	TOSHIBA/东芝	23+	DFN5B	50000	全新原装正品现货,支持订货	询价
深圳市佳斯泰科技有限公司	TCR8BM11,L3F	Toshiba	22+	4-XDFN	9000	原厂渠道,现货配单	询价
深圳市得捷芯城科技有限公司	TCR8BM11A	TOSHIBA/东芝	24+	NA/	38850	原厂直销,现货供应,账期支持!	询价
深圳市中联芯电子有限公司	TCR8BM11A	TOSHIBA/东芝	23+	DFN5B	9890	原装原盒标现货可开发票	询价
天津市博通航睿技术有限公司	TCR8BM11A,L3F	TOSHIBA			100		询价
现代芯城（深圳）科技有限公司	TCR8BM11A,L3F		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市宏捷佳电子科技有限公司	TCR8BM11L3F	Toshiba Semiconductor and Stor	25+	4-XDFN 裸露焊盘	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
北京京北通宇电子元件有限公司	TCR8BM11A,L3F	TOSHIBA	1905	con	100	现货常备产品原装可到京北通宇商城查价格	询价
深圳市德力诚信科技有限公司	TCR8BM11A,L3F	TOSHIBA	24+	con	2500	优势库存,原装正品	询价
深圳市博中泰实业有限公司	TCR8BM11A	TOSHIBA/东芝	24+	DFN5B	60000		询价

更多1M1供应商更新时间2025-10-31 11:00:00

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