| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | TRSYS | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | TRSYS | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | TRSYS | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | TRSYS | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE-11TO200VoltsPower-1.0Watt FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan5.0Aabove11V •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratory | TRSYS Transys Electronics | TRSYS | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
Glass Passivated Junction Silicon Zener Diode Features ♦Lowprofilepackage ♦Built-instrainrelief ♦Glasspassivatedjunction ♦Lowinductance ♦TypicalIRlessthan5uAabove11V ♦Hightemperaturesolderingguaranteed:260℃/10secondsatterminals ♦PlasticpackagehasUnderwriters LaboratoryFlammabilityCl | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
1.0 WATT SURMETIC 30 SILICON ZENER DIODES 500mWDO-35GlassZenerVoltageRegulatorDiodes GENERALDATAAPPLICABLETOALLSERIESINTHISGROUP500MilliwattHermeticallySealedGlassSiliconZenerDiodes Thisisacompleteseriesof5WattZenerDiodeswithtightlimitsandbetteroperatingcharacteristicsthatreflectthesuperiorcap | MotorolaMotorola, Inc 摩托罗拉 | Motorola |
产品属性
- 产品编号：
1M110Z
- 制造商：
Taiwan Semiconductor Corporation
- 类别：
分立半导体产品 > 二极管 - 齐纳 - 单
- 包装：
卷带（TR）
- 容差：
±5%
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
DO-204AL，DO-41，轴向
- 供应商器件封装：
DO-204AL（DO-41）
- 描述：
DIODE ZENER 110V 1W DO204AL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
78000 |
一级代理放心采购 |
询价 | |||
TAIWAN |
1809+ |
DO-204 |
16750 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TSC-台半 |
24+25+/26+27+ |
DO-204 |
236148 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
厚声 |
2023+ |
1206 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
相关规格书
更多- 1M110Z R0
- 1M110ZS5
- 1M120Z R0
- 1M120ZS5
- 1M130Z R0
- 1M130ZS5
- 1M150Z
- 1M150ZS10
- 1M160Z
- 1M160ZS10
- 1M16160103302032500CB1
- 1M16160103365003200AB210
- 1M16160103365006000CD1
- 1M16160103365016.CD120
- 1M16160103801003.000CD120
- 1M180Z
- 1M180ZS10
- 1M1A2C3P
- 1M1A2C6P
- 1M1A2C9P
- 1M1A5C5P
- 1M1A5C7P
- 1M1BC3P
- 1M1BC6P
- 1M1BC9P
- 1M1-DP1-R6/1-1M1GE
- 1M1-DP1-R7/2-2M1QE
- 1M1-DP3-R6/1-1M1GE
- 1M1-DP3-R7/2-2M1QE
- 1M1-DP4-R2/3-2M3QE
- 1M1-DP5-R6/2-2M1GE
- 1M1-DP8-R3/2-M1QE
- 1M1SP1R1/2VS2GE
- 1M200Z
- 1M200ZS10
- 1M20200243365012.000CB
- 1M-2121-014-3365-003.6-00-AB-00-0
- 1M30
- 1M30300163319058500CB0
- 1M31T1B1M1QE
- 1M41T1B1M1QE
- 1M41T6B11M1QE
- 1M43T1B5M1QE
- 1M45T1B5M1QE
- 1M50500163365020000AB0000
相关库存
更多- 1M110ZS10
- 1M120Z
- 1M120ZS10
- 1M130Z
- 1M130ZS10
- 1M1-4P3-R6/2-M3QE
- 1M150Z R0
- 1M150ZS5
- 1M160Z R0
- 1M160ZS5
- 1M16160103319025.000CB
- 1M16160103365004000AB1
- 1M16160103365013.CD120
- 1M1616-010-3539-14.0-00-CD12-2
- 1M170ZS10
- 1M180Z R0
- 1M180ZS5
- 1M1A2C5P
- 1M1A2C7P
- 1M1A5C3P
- 1M1A5C6P
- 1M1A5C9P
- 1M1BC5P
- 1M1BC7P
- 1M1-DP1-R1/2-M1QE
- 1M1-DP1-R6/2-2M1GE
- 1M1-DP3-R1/2-M1QE
- 1M1-DP3-R6/2-2M1GE
- 1M1-DP4-R1/3-2M3QE
- 1M1-DP5-R6/1-1M1GE
- 1M1-DP6-R6/2-2M3QE
- 1M1M-HOS-3FT
- 1M1-SP1-R1/2-VS2GE
- 1M200Z R0
- 1M200ZS5
- 1M2110-040-3365-002.8-00-AB-00
- 1M-2552-1-0210
- 1-M-30
- 1M303002033650045AB000
- 1M3C104K160
- 1M41T1B5M1QE
- 1M42T1B5M1QE
- 1M44T1B5M1QE
- 1-M-4C
- 1M50Z2
