1EDN7136U集成电路（IC）的栅极驱动器规格书PDF中文资料

1EDN7136U属于集成电路（IC）的栅极驱动器。由英飞凌科技股份公司制造生产的1EDN7136U栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。

特性 Features

• Optimized for driving GaN SG HEMTs and Si MOSFETs

• Fully diferential logic input circuitry to avoid false triggering

in low-side or high-side operation

• High common-mode input voltage range (CMR) up to ± 200 V

for high side operation

• High immunity to common-mode voltage transitions (100

V/ns) for robust operation during fast switching

• Compatible with 3.3 V or 5 V input logic

• Four driving strength variants to optimize switching speed

without external gate resistors - up to 2 A source/sink current

capability

• Active bootstrap clamp to avoid bootstrap capacitor

overcharging during dead-time

• Active Miller clamp with 5 A sink capability to avoid induced

turn-on

• Qualified for industrial applications according to the relevant

tests of JEDEC47/20/22

描述 Description

The 1EDN71x6U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky Gate

HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that

enable a high-performance system design with GaN SG HEMTs, including Truly Diferential Input, four driving

strength options, active Miller clamp, and bootstrap voltage clamp.