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型号	下载订购	功能描述	制造商上传企业	LOGO
1ED2	文件：255.27 Kbytes Page：4 Pages	Medium Performance Compact EMI Power Inlet Filter 文件：255.27 Kbytes 页数：4 Pages	MACOM	MACOM
1ED21271S65F	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED21271S65FXUMA1	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED2127S65F	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED2127S65FXUMA1	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED21471S65F	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED21471S65FXUMA1	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED2147S65F	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED2147S65FXUMA1	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon
1ED21X7X	文件：678.92 Kbytes Page：21 Pages	650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag 文件：678.92 Kbytes 页数：21 Pages	Infineon 英飞凌	Infineon

技术参数

VBS UVLO(Off)：
8.7 V
VCC UVLO(Off)：
8.7 V
VCC UVLO(On)：
10 V
Turn Off Propagation Delay：
55 ns
Package：
PG-DSO-8
Turn On Propagation Delay：
55 ns
Voltage Class：
650 V
Qualification：
Industrial
Input Vcc：
10.8 V to 22 V
Output Current(Source)：
4 A
Output Current(Sink)：
4 A
Channels：
1
Configuration：
High-side
Isolation Type：
Functional levelshift

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	1ED20I12MF	INFINEON	23+	SOP	70000	专注配单,只做原装进口现货	询价
深圳市星辰微电科技有限公司	1ED3120MC12H	Infineon	23+	PG-DSO-8	15500	英飞凌优势渠道全系列在售	询价
深圳市煦洪科技有限公司	1ED3120MC12H	Infineon/英飞凌	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市铨博晟科技有限公司	1ED3120MC12HXUMA1	英飞凌(INFINEON)	23+		52500	只有原装/价格优势/全线可订	询价
深圳市高捷芯城科技有限公司	1ED3120MC12HXUMA1	Infineon(英飞凌)	24+	SOP8	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	1ED3120MC12HXUMA1	Infineon(英飞凌)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
上海皇华信息科技有限公司	1ED3120MC12HXUMA1	Infineon			4873	只做正品	询价
现代芯城（深圳）科技有限公司	1ED3120MC12HXUMA1		24+	N/A	72000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市芯球通科技有限公司	1ED3120MC12HXUMA1	Infineon(英飞凌)	23+		19850	原装正品,假一赔十	询价
深圳市德力诚信科技有限公司	1ED3120MC12HXUMA1	INFINEON	24+	con	333475	优势库存,原装正品	询价

更多1ED2供应商更新时间2025-10-4 15:01:00

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