OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：299.61 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel Power MOSFET

文件：595.58 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：180N10N；Package：PG-TO262-3；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：299.61 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：180N10N；Package：PG-TO220-3；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：299.61 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：180N100；Package：TO-263；100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

文件：636.04 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：180N100；Package：TO-220；100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

文件：636.04 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：180N100；Package：TO-220；100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested, 100% Rg Tested Pb-free lead plating

文件：932.81 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：180N100；Package：TO-247；100V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dv/dtcapability 100% UIS tested 100% Rg Tested Pb-free lead plating

文件：636.04 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：180N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =180A RDS(ON)

文件：395.76 Kbytes 页数：7 Pages

RECTRON

丽正国际

OptiMOS™3 Power-Transistor

• N-channel, normal level\n• Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• 175 °C operating temperature\n• Pb-free lead plating; RoHS compliant\n• Qualified according to JEDEC1) for target application\n• Ideal for high-frequency switching and synchronous rectif;

Infineon

英飞凌