-17A, -100V P-CHANNEL POWER MOSFET

The 17P10-Q uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge andoperation with low gate voltages. This device is suitable to beused in low voltage applications such as audio amplifier, highefficiency switching DC/DC converters, and DC motor contr RDS(ON) < 0.19Ω @ VGS=-10V, ID=-8.5A Low capacitance Low gate charge Fast switching capability Avalanche energy specified;

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友顺

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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Fairchild

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=-18A@ TC=25℃ ·Drain Source Voltage- : VDSS=-100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：667.68 Kbytes 页数：8 Pages

Fairchild

仙童半导体