丝印：17N80K5；Package：D2PAK；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：921.43 Kbytes 页数：15 Pages

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意法半导体

丝印：17N80K5；Package：TO-220FP；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：636.91 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：17N80K5；Package：TO-220；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：739.57 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

文件：983.06 Kbytes 页数：13 Pages

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丝印：17N80C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

文件：1.41387 Mbytes 页数：13 Pages

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英飞凌

丝印：17N80C3；Package：TO-220；CoolMOS Power Transistor Features New revolutionary high voltage technology

文件：401.12 Kbytes 页数：10 Pages

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丝印：17N80C3；Package：TO-220；Cool MOS??Power Transistor

文件：983.06 Kbytes 页数：13 Pages

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CoolMOS® Power Transistor

• new revolutionary high voltage technology\n• Extreme dv/dt rated\n• High peak current capability\n• Qualified according to JEDEC1) for target applications\n• Pb-free lead plating; RoHS compliant\n• Ultra low gate charge\n• Ultra low effective capacitancesCoolMOS™ 800V designed for:\n• Industrial a;

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