MOS管

ZG

中鑫半导体

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤290mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.84 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

文件：257.62 Kbytes 页数：11 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated

文件：683.83 Kbytes 页数：11 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：736.98 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：17N800；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant

文件：893.56 Kbytes 页数：12 Pages

RECTRON

丽正国际

丝印：17N800；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant

文件：893.56 Kbytes 页数：12 Pages

RECTRON

丽正国际

丝印：17N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant

文件：893.56 Kbytes 页数：12 Pages

RECTRON

丽正国际

丝印：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) • Pb

文件：333.85 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：17N80C3；Package：TO-220；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) • Pb

文件：333.85 Kbytes 页数：13 Pages

Infineon

英飞凌