丝印：15；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微电子

丝印：15；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Inverter with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input voltage

文件：169.74 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：15；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Inverter with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input voltage

文件：168.92 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：15；Package：SOD-323；1-Line Bi-directional TVS Diode

Features  500W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage: nA level  Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：15；Package：178M15CP；Three-Terminal Regulator

STRUTURE : Silicon Monolithic Intergrated Circuit TYPE : Three-Terminal Regulator FEATURES : Output current up to 0.5A

文件：359.61 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：15；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications • Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：15；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：15；Package：SOT-23；Digital transistors (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow positive biasing of the input. They also have the ad

文件：79.01 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：15；Package：SOT-416；Digital transistors (built-in resistors)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow positive biasing of the input. They also have the ad

文件：79.01 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：15；Package：EMT3；Built-In Biasing Resistors, R1 = R2 = 22k??

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow positive biasing of the input. They also have the ad

文件：279.63 Kbytes 页数：11 Pages

ROHM

罗姆