| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel500V,0.285typ.,12AMDmeshTMIIPowerMOSFETinaDPAKpackage Features •AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesavertical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL550V-0.32ohm-14ATO-247MDmeshPowerMOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel500V-0.32廓-12A-TO-220/FP-D2/I2PAK-TO-247FDmesh??PowerMOSFET(withfastdiode) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247FDmesh??PowerMOSFETwithFASTDIODE Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO-220F |
66900 |
原厂原装现货 |
询价 | ||
ST |
23+ |
TO-220F |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
23+ |
TO-220F |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
22+ |
TO-220F |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
TO-220F |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
S |
23+ |
DPAK |
10000 |
公司只做原装正品 |
询价 | ||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
S |
DPAK |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ST/意法 |
23+ |
NA/ |
360 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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