中低压MOSFET

PINGWEI

平伟

丝印：14N045；Package：M2PAK-7P；Single N-channel Trench MOSFET 135V 4.5mΩ 228A

General description MDY14N045RH uses advanced Magnachip’s MV MOSFET Technologies, which provides high performance in on-state resistance, fast switching, parallel performance and excellent quality. MDY14N045RH is the best solution for high power application where thermal behavior. Driver so

文件：718.82 Kbytes 页数：7 Pages

MGCHIP

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

文件：157.32 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

OMNIFET fully autoprotected Power MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

文件：522.24 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14N04, VNK14N04FM and VNV14N04 are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip

文件：157.32 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体