| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
13NM60N | N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
13NM60N | N-Channel 650V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
13A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI짼PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
13NM60N
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT?(8x8) HV MDmesh? II Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2017+ |
TO220F |
21546 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ST |
23+ |
TO220F |
150 |
原装环保房间现货假一赔十 |
询价 | ||
23+ |
N/A |
49400 |
正品授权货源可靠 |
询价 | |||
ST |
1926+ |
TO-220F |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ST |
1115+ |
TO220F |
150 |
刚到现货加微13425146986 |
询价 | ||
ST |
23+ |
TO220-3 |
20000 |
原厂原装正品现货 |
询价 | ||
ST |
20+ |
220F-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST |
2022+ |
12 |
全新原装 货期两周 |
询价 | |||
ST |
2023+ |
TO220-3 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST/意法 |
220F-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 |
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