045N10A

100 V N-Channel MOSFET

•Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V)

045N10N

OptiMOSTM3Power-Transistor,100V

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor

045N10N

OptiMOSTM3Power-Transistor

VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal

FDI045N10A

N-ChannelPowerTrench짰MOSFET100V,164A,4.5m廓

0460-202-16141

TE
SOT-23-5