100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

文件：1.73694 Mbytes 页数：7 Pages

UMW

友台半导体

丝印：045N10A；Package：TO-220；100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

文件：1.73694 Mbytes 页数：7 Pages

UMW

友台半导体

OptiMOSTM3 Power-Transistor, 100 V

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor

文件：1.66632 Mbytes 页数：10 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

VDS 100 V RDS(on),max 4.5 mW ID 64 A Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal

文件：283.67 Kbytes 页数：9 Pages

Infineon

英飞凌

N-Channel PowerTrench짰 MOSFET 100 V, 164 A, 4.5 m廓

文件：317.23 Kbytes 页数：10 Pages

Fairchild

仙童半导体