0402C

SMD Wire Wound Ceramic Chip Inductors

0402CS-1N8XJLU

This document describes specifications for the F1650NLGI Zero/Complex IF Modulator implementing Zero-DistortionTM technology for low power consumption with improved ACLR. This device interfaces directly to a high performance Tx dual DAC.

FEATURES PowerGain=3.25dB Direct100ΩdifferentialdrivefromTxDAC 

0402CS-22NXGLW

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ09312Bisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

0402CS-33NXGLW

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ09312Bisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

0402CS-7N5XJBC

Indium Gallium Phosphorus HBT

IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1

0402C103B6NB10

Multilayer Ceramic Chip Capacitors

0402C103B6NB4

Multilayer Ceramic Chip Capacitors

0402C103B6NT10

Multilayer Ceramic Chip Capacitors

0402C103B6NT4

Multilayer Ceramic Chip Capacitors

0402C103B6PB10

Multilayer Ceramic Chip Capacitors