首页 >0215CAD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ACTUATOR,SWITCH,SQUARE,LATCHRoHS:Compliant Illuminatedornon-illuminatedpushbuttonswitches Panelcut-outØ22(.866)or29,5x21,5(1.160x.846) | APEMAPEM an IDEC company 埃斐 | APEM | ||
ACTUATOR,SWITCH,SQUARE,LATCHRoHS:Compliant Illuminatedornon-illuminatedpushbuttonswitches Panelcut-outØ22(.866)or29,5x21,5(1.160x.846) | APEMAPEM an IDEC company 埃斐 | APEM | ||
PLLModule Description TheplerowTMPLLsynthesizermodulewasdesignedforuseinwirelessandwirelinesystemsinawiderangeoffrequencyfrom50MHzto6GHz.ASBísPLLprovidesexceptionallylowspuriousandphasenoiseperformancewithfastlockingtimeandlowcurrentconsumption.Allproductsare | ASB Advanced Semiconductor Business Inc. | ASB | ||
MechanicalCamSwitches BNS819-B08-R08-46-13 Basicfeatures Approval/ConformityCE UKCA CCC WEEE BasicstandardIEC60947-5-1 Operatingprinciple1-8.Switchposition:Mechanical VersionSnapcontact | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫集团 | Balluff | ||
CuAlloyBareFerrule,SmoothFunnelEntry,2AWG,0.59L,Seamlessbbl,TinPlated,ForUseOnCuCond. | HUBBELL HUBBELL INCORPORATED | HUBBELL | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,2A,RDS(ON)=440mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,1.8A,RDS(ON)=460mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=515mW@VGS=5V. RDS(ON)=530mW@VGS=3V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
Surfacemount,silver(Ag)coatedceramicduplexer. | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. RDS(ON)=580mΩ@VGS=6V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-223package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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