N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22808 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：012N08N5；Package：PG-HSOF-8-1；N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22808 Mbytes 页数：12 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=300A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver

文件：393.8 Kbytes 页数：3 Pages

ISC

无锡固电

N-channel, normal level

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22808 Mbytes 页数：12 Pages

Infineon

英飞凌