| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Dual 40V complementary transistors in SOT23-6 Features •40Vcomplementarydevice •Upto5ampspeakcurrent •HighhFE •SOT236package Applications •MOSFETandIGBTgatedriving | Zetex Zetex Semiconductors | Zetex | ||
Dual 40V complementary transistors in SOT23-6 Description Advancedprocesscapabilityisusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistors,theSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>30(-30)V •BVCEV>40(-40)V •ICM=5(-5)APe | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Dual 40V complementary transistors in SOT23-6 Features •40Vcomplementarydevice •Upto5ampspeakcurrent •HighhFE •SOT236package Applications •MOSFETandIGBTgatedriving | Zetex Zetex Semiconductors | Zetex | ||
Dual 40V complementary transistors in SOT23-6 Description Advancedprocesscapabilityisusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistors,theSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>30(-30)V •BVCEV>40(-40)V •ICM=5(-5)APe | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Dual 40V complementary transistors in SOT23-6 Features •40Vcomplementarydevice •Upto5ampspeakcurrent •HighhFE •SOT236package Applications •MOSFETandIGBTgatedriving | Zetex Zetex Semiconductors | Zetex | ||
Dual 40V complementary transistors in SOT23-6 Description Advancedprocesscapabilityisusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistors,theSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>30(-30)V •BVCEV>40(-40)V •ICM=5(-5)APe | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
12V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityhasbeenusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>12(-12)V •BVEBO>7(-7)V •Continuous | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
12V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityhasbeenusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>12(-12)V •BVEBO>7(-7)V •Continuous | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
40V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityhasbeenusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT23-6packageprovidesacompactsolutionfortheintendedapplications. Features •NPN-PNPcombination •Verylowsaturationvoltage •Highgain •SOT2 | Zetex Zetex Semiconductors | Zetex | ||
40V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityisusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>40(-40)V •BVECO>6(-3)V •ICM=9(-9)APe | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
40V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityhasbeenusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT23-6packageprovidesacompactsolutionfortheintendedapplications. Features •NPN-PNPcombination •Verylowsaturationvoltage •Highgain •SOT2 | Zetex Zetex Semiconductors | Zetex | ||
40V, SOT23-6, complementary medium power transistors Description Advancedprocesscapabilityisusedtoachievethishighperformancedevice.CombiningNPNandPNPtransistorsintheSOT26packageprovidesacompactsolutionfortheintendedapplications. Features •NPN+PNPCombination •BVCEO>40(-40)V •BVECO>6(-3)V •ICM=9(-9)APe | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features NPNTransistor •BVCEO>40V •IC=3AContinuousCollectorCurrent •LowSaturationVoltage(500mVmax@1A) •RSAT=195mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-50 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features NPNTransistor •BVCEO>40V •IC=3AContinuousCollectorCurrent •LowSaturationVoltage(500mVmax@1A) •RSAT=195mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturationVoltage(-50 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features NPNTransistor •BVCEO>15V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=45mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-1 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features NPNTransistor •BVCEO>15V •IC=4.5AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=45mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-12V •IC=-4AContinuousCollectorCurrent •LowSaturationVoltage(-1 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION FeaturesandBenefits NPNTransistor •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=68mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturation | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION FeaturesandBenefits NPNTransistor •BVCEO>50V •IC=4AContinuousCollectorCurrent •LowSaturationVoltage(100mVmax@1A) •RSAT=68mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-40V •IC=-3AContinuousCollectorCurrent •LowSaturation | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION FeaturesandBenefits NPNTransistor •BVCEO>80V •IC=3.5AContinuousCollectorCurrent •LowSaturationVoltage(185mVmax@1A) •RSAT=68mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-70V •IC=-2.5AContinuousCollectorCurrent •LowSaturat | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION FeaturesandBenefits NPNTransistor •BVCEO>80V •IC=3.5AContinuousCollectorCurrent •LowSaturationVoltage(185mVmax@1A) •RSAT=68mΩforalowequivalentOn-Resistance PNPTransistor •BVCEO>-70V •IC=-2.5AContinuousCollectorCurrent •LowSaturat | DIODESDiodes Incorporated 达尔科技 | DIODES |
详细参数
- 型号：
ZXTC
- 制造商：
Diodes Incorporated
- 功能描述：
TRANSISTOR NPN/PNP SOT23-6
- 功能描述：
TRANSISTOR, NPN/PNP, SOT23-6
- 功能描述：
TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor
- Polarity：
NPN/PNP; Collector Emitter Voltage
- V(br)ceo：
30V; Power Dissipation
- Pd：
1.7W; DC Collector
- Current：
1.5A; DC Current Gain
- hFE：
300; No. of
- Pins：
6 ;RoHS
- Compliant：
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
23+ |
SOT-23-6 |
7750 |
全新原装优势 |
询价 | ||
TI |
2021++ |
SO-20 |
8000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
询价 | ||
Zetex Semiconductors |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ZETEX/DIODES |
SOT26 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | |||
DIODES-美台 |
24+25+/26+27+ |
SOT-23-6 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
DIODES |
2017+ |
SOT23-6 |
45896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ZetexInc |
07+/08+ |
SOT-23-6 |
7500 |
询价 | |||
ZETEX |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
DiodesZetex |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
询价 |
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