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HCS273D

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS273D

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273DMSR

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273DMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS273HMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS273HMSR

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273K

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273K

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS273KMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS273KMSR

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273MS

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS273MS

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT273

OctalDFlip-FlopwithCommonClockandResetwithLSTTL-CompatibleInputs

OctalDFlip-FlopwithCommonClockandResetwithLSTTL-CompatibleInputs High–PerformanceSilicon–GateCMOS TheMC74HCT273AmaybeusedasalevelconverterforinterfacingTTLorNMOSoutputstoHigh–SpeedCMOSinputs. TheHCT273AisidenticalinpinouttotheLS273. Thisdevicec

MotorolaMotorola, Inc

摩托罗拉

HCT273

OCTALD-TYPEFLIPFLOPWITHCLEAR

DESCRIPTION The74VHCT273Aisanadvancedhigh-speedCMOSOCTALD-TYPEFLIPFLOPWITHCLEARfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:fMAX=170MHz(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=4µA(MAX.)atTA=25°C ■COMPATIBLE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

HCT273

OctalDFlip-FlopwithCommonClockandResetwithLSTTL-CompatibleInputs

OctalDFlip-FlopwithCommonClockandResetwithLSTTL-CompatibleInputs High−PerformanceSilicon−GateCMOS TheMC74HCT273AmaybeusedasalevelconverterforinterfacingTTLorNMOSoutputstoHigh−SpeedCMOSinputs.TheHCT273AisidenticalinpinouttotheLS273. Thisdevicecons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HCTS273D

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCTS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCTS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCTS273MS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS273D

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s.20nsPulse •La

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS273DMSR

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s.20nsPulse •La

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS273DMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCTS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCTS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCTS273MS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS273HMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCTS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCTS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCTS273MS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    Z273Z WAF

  • 制造商:

    Fairchild Semiconductor Corporation

供应商型号品牌批号封装库存备注价格
SK
ZIP-13
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
HVCA
5
全新原装 货期两周
询价
HVCA
2022+
1
全新原装 货期两周
询价
CKE Z230LA4 Z230LA10 Z230LA20A
Z175LA20A Z210LA4 Z210LA10 Z21
Z150LA10A Z150LA20A Z175LA2 Z1
5000
全新原装现货 样品可售
询价
INTEL
1844+
BGA
6528
只做原装正品假一赔十为客户做到零风险!!
询价
INTEL
2023+
BGA
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
INTEL
21+
BGA
35200
一级代理/放心采购
询价
INTEL
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
INTEL/英特尔
23+
BGA
50000
全新原装正品现货,支持订货
询价
INTEL/英特尔
BGA
396379
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
更多Z273Z WAF供应商 更新时间2024-6-3 11:04:00