| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
100A,55V,0.008Ohm,N-Channel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelTrenchProcessPowerMOSFETTransistor | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
HEXFETPowerMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
N-ChannelPowerMOSFET(55V/110A) | FS First Silicon Co., Ltd | FS | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
YPI |
2018+ |
TO220 |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
YPI |
22+ |
TO220 |
360000 |
进口原装房间现货实库实数 |
询价 | ||
YPI |
22+ |
TO220 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
YPI |
21+ |
TO220 |
50 |
原装现货假一赔十 |
询价 | ||
YPI |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
询价 | ||
原装 |
1923+ |
TO220 |
8900 |
公司库存原装低价格欢迎实单议价 |
询价 | ||
YPI |
2122+ |
TO220 |
19990 |
全新原装正品现货,优势渠道可含税,假一赔十 |
询价 | ||
YPI |
21+ |
TO220 |
9866 |
询价 | |||
YPI |
2023+ |
TO220 |
6893 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
YPI |
2023+ |
TO220 |
50 |
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询价 |
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