首页 >YLN2803APG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountRFSchottkyBarrierDiodesHighBreakdownVoltage Description/Applications TheseSchottkydiodesarespecificallydesignedforbothanaloganddigitalapplications.Thisseriesoffersawiderangeofspecificationsandpackageconfigurationstogivethedesignerwideflexibility.TheHSMS-280xseriesofdiodesisoptimizedforhighvoltagea | AVAGOAvago 安华高安华高科技 | AVAGO | ||
SurfaceMountRFSchottkyBarrierDiodes Description/Applications TheseSchottkydiodesarespecificallydesignedforbothanaloganddigitalapplications.Thisseriesoffersawiderangeofspecificationsandpackageconfigurationstogivethedesignerwideflexibility.TypicalapplicationsoftheseSchottkydiodesaremixing,detectin | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
SurfaceMountRFSchottkyBarrierDiodes | AVAGOAvago 安华高安华高科技 | AVAGO | ||
SurfaceMountRFSchottkyBarrierDiodes | AVAGOAvago 安华高安华高科技 | AVAGO | ||
NoHigh-VoltageBias,LowHarmonicDistortion,32-Channel,High-VoltageAnalogSwitch Features •32-Channel,High-VoltageAnalogSwitch •NoHigh-VoltageSuppliesRequired •32-Channel,Single-Pole,Single-Throw(SPST) IndividualSwitchingorBankSwitching •3.3VCMOSInputLogicLevel •66MHzDataShiftClockFrequency •Silicon-on-Insulator(SOI)High-Voltage Technology | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
NoHigh-VoltageBias,LowHarmonicDistortion,32-Channel,High-VoltageAnalogSwitch Features •32-Channel,High-VoltageAnalogSwitch •NoHigh-VoltageSuppliesRequired •32-Channel,Single-Pole,Single-Throw(SPST) IndividualSwitchingorBankSwitching •3.3VCMOSInputLogicLevel •66MHzDataShiftClockFrequency •Silicon-on-Insulator(SOI)High-Voltage Technology | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
GenerationVTechnologyUltraLowOn-Resistance Features VDS(V)=30V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.25ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor,provid | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRALOWONRESISFANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnologyUltraLowOn-Resistance Features VDS(V)=30V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
GenerationVTechnology,UltraLowOn-Resistance
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
EarthLeakageDetector | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
EarthLeakageDetector | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2017+ |
DIP |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
JST |
18+ |
9800 |
代理进口原装/实单价格可谈 |
询价 | |||
JST |
21+ |
12588 |
连接器 |
询价 | |||
JST/日压 |
22+ |
原厂原封 |
12315 |
只做原装现货 提供一站式配套供货 中利达 |
询价 | ||
JST |
2021+ |
标准接口 |
285000 |
专供连接器,军工合格供应商! |
询价 | ||
JST/日压 |
2021+ |
C0603 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
JST |
* |
* |
7 |
原装进口,要货Q谈,只做原装,只做原装 |
询价 | ||
JST/日压 |
标准封装 |
59066 |
一级代理原装正品现货期货均可订购 |
询价 | |||
JST |
22+ |
N/A |
51800 |
优势价格原装现货提供BOM一站式配单服务 |
询价 | ||
JST |
22+ |
连接器 |
123000 |
主打连接器供应,现货库存 |
询价 |
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