| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
YJL2312A | N-Channel Enhancement Mode Field Effect Transistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | |
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托（中国）有限公司 | FESTO | ||
NylonHoseClamps | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | ||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
YANGJIE(扬杰) |
2112+ |
SOT-23-3L |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
YANGJIE扬杰 |
23+ |
SOT-23-3L |
22820 |
原装正品，支持实单 |
询价 | ||
YANGJIE |
23+ |
NA |
10 |
现货!就到京北通宇商城 |
询价 | ||
YANGJIE |
24+25+/26+27+ |
SOT-23.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
YANGJIE(扬杰) |
23+ |
SOT233L |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
23+ |
N/A |
58300 |
一级代理放心采购 |
询价 | |||
YANGJIE |
10 |
询价 | |||||
YANGJIE |
24+ |
SOT-23 |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
询价 | ||
Yangzhou Yangjie Electronic Te |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
扬杰科技 |
21+ |
SOT-523 |
5650 |
全新原装鄙视假货15118075546 |
询价 |
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