NX6309GH

1310nmInGaAsPMQW-DFBLASERDIODEFOR1.25Gb/sFTTHPONAPPLICATION

DESCRIPTION TheNX6309GHisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD. FEATURES •OpticaloutputpowerPo=10.0mW •Lowthresholdcurrentlth=10mA •Differentialefficiencyηd=0.40W/A •Wideoperatingtemperat

NX6309GH-AZ

1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD.

P-6309

POWERTRANSFORMERS

SG-BGA-6309

Ballguidepreventsovercompressionofelastomer

SP-6309

Totallyfanlessandquietdesign

SPP6309

DualP-ChannelEnhancementModeMOSFET

SZN6309

2.4??200VOLTSZENERDIODES

FEATURES: ■HermeticallySealedinGlass ■Ratedat0.5W ■CategoryIIIMetallurgicalBond ■AvailableinAxialandSquareTabSurfaceMount(SMS)version ■AvailabletoTX,TXV,andSpaceLevels2/ ■ZenerVoltage5,2or1Tolerance ■Replacementfor1N6309thru1N6333

T6309A

MicropowerStep-upDC/DCConverter

T6309A-AX

MicropowerStep-upDC/DCConverter

T6309A-BX

MicropowerStep-upDC/DCConverter

T6309B

MicropowerStep-upDC/DCConverter

T6309B-AX

MicropowerStep-upDC/DCConverter

T6309B-BX

MicropowerStep-upDC/DCConverter

V6309

3-PinMicroprocessorResetCircuit

Description TheV6309andV6319aremicroprocessorsupervisorycircuitsusedtomonitorthepowersuppliesinµPanddigitalsystems.Theyprovideexcellentcircuitreliabilityandlowcostbyeliminatingexternalcomponentsandadjustmentswhenusedwith5Vpoweredor3Vpoweredcircuits. Featu