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836A	文件：97.67 Kbytes Page：6 Pages	SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur	Zetex Zetex Semiconductors	Zetex
836A	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors	Zetex
836B	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	Zetex Zetex Semiconductors	Zetex
836B	文件：66.99 Kbytes Page：2 Pages	SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
836C-X	文件：78.79 Kbytes Page：2 Pages	83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS [GORDOS] REEDRELAYS 83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
A836ERW	文件：196 Kbytes Page：2 Pages	LowCost,8WDIPWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
ADG836	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836L	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM-REEL	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADUC836	文件：1.57008 Mbytes Page：80 Pages	MicroConverter,Dual16-BitADCswithEmbedded62kBFlashMCU	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市瑞祥辉半导体有限公司	X836KN	SAMSUNG/三星	23+	QFN	1280	进口原装假一罚十特价	询价
深圳市达恩科技有限公司	X836KN	SAMSUNG/三星	18+	QFN	200	进口原装正品优势供应QQ3171516190	询价
深圳市百视威讯电子科技有限公司	X836KN		23+	N/A	38460	正品授权货源可靠	询价
深圳市毅创弘电子科技有限公司	X836KN	SAMSUNG/三星	23+	QFN	66800	现货正品专供军研究院	询价
艾睿国际（香港）有限公司	X836KN	SAMSUNG/三星	2021+	QFN	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市莱克讯科技有限公司	X836KN	AD		NA	2230	只做进口原装!假一赔百!自己库存价优!	询价
深圳市振芯物联科技有限公司	X836KN	SAMSUNG	22+	QFN	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	X836KN	SAMSUNG/三星	23+	QFN	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	X836KN	N/A	21+	QFN	15000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
中科航电（深圳）电子集团有限公司	X836KN	SAMSUNG		QFN	396379	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多X836KN供应商更新时间2024-4-28 14:00:00

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