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HCS374K/SAMPLE

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT374

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPS

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCT-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTR-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374DTR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-time

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
WINBOND/华邦
23+
QFP
50000
全新原装正品现货,支持订货
询价
WINBOND/华邦
2122+
QFP
29860
全新原装正品,价格优势一片起售,可做含税
询价
WINBOND/华邦
23+
NA/
3274
原厂直销,现货供应,账期支持!
询价
WINBOND
2016+
QFP128
6523
只做进口原装现货!假一赔十!
询价
WINBOND
2017+
QFP128
45248
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
WINBOND
2016+
QFP-128
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
WINBOND
2021+
QFP
6024
百分百原装正品
询价
WINBOND
22+23+
QFP128
10427
绝对原装正品全新进口深圳现货
询价
WINBOND
23+
QFP128
116
原装现货假一赔十
询价
23+
N/A
38460
正品授权货源可靠
询价
更多WPCD374LAWFG存储IC供应商 更新时间2024-5-19 11:00:00