零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SurfaceMountFuses | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
Built-inHydraulicsTiltUprightDrumtoHorizontal | MORSEMorse Mfg. Co., Inc. 莫尔斯莫尔斯制造公司 | MORSE | ||
GeneralPurposeTweezers | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
REMOCONMODULE | E-OECOpto Electronics Co,. LTD Opto Electronics Co,. LTD | E-OEC | ||
REMOCONMODULE | E-OECOpto Electronics Co,. LTD Opto Electronics Co,. LTD | E-OEC | ||
ACPL-P456andACPL-W456IntelligentPowerModuleandGateDriveInterfaceOptocouplers Description TheACPL-P456andACPL-W456containaGaAsPLEDopticallycoupledtoanintegratedhighgainphotodetector.Minimizedpropagationdelaydifferencebetweendevicesmaketheseoptocouplersexcellentsolutionsforimprovinginverterefficiencythroughreducedswitchingdeadtime.Specif | AVAGOAvago 安华高安华高科技 | AVAGO | ||
HighCMRIntelligentPowerModuleandGateDriveInterfaceOptocoupler | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
ACPL-P456andACPL-W456IntelligentPowerModuleandGateDriveInterfaceOptocouplers Description TheACPL-P456andACPL-W456containaGaAsPLEDopticallycoupledtoanintegratedhighgainphotodetector.Minimizedpropagationdelaydifferencebetweendevicesmaketheseoptocouplersexcellentsolutionsforimprovinginverterefficiencythroughreducedswitchingdeadtime.Specif | AVAGOAvago 安华高安华高科技 | AVAGO | ||
N-Channel20-V(D-S)175CMOSFET FEATURES ●TrenchFETPowerMOSFET ●175°CMaximumJunctionTemperature ●100RgTested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=50A@TC=25℃ •DrainSourceVoltage- :VDSS=25V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel20-V(D-S)175CMOSFET FEATURES ●TrenchFETPowerMOSFET ●175°CMaximumJunctionTemperature ●100RgTested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PlasticEncapsulatedDevice ProductDescription: TheAOD456AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456AisPb-free(meetsROHS&Sony259specifications). A | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PlasticEncapsulatedDevice ProductDescription: TheAOD456AusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456AisPb-free(meetsROHS&Sony259specifications). A | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD456usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD456isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
WP456
- 制造商:
Black Box Corporation
- 功能描述:
GigaStation Wallplate, 1-Port, Single-Gang, Office White
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VICOR |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
WATTELECTRON |
23+ |
65480 |
询价 | ||||
KINGBRIGT-今台 |
24+25+/26+27+ |
车规-LED发射 |
26528 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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相关库存
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