GENERAL DESCRIPTION

W9812G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words × 4 banks × 16 bits. W9812G6IH delivers a data bandwidth of up to 200M words per second (-5). For different application, W9812G6IH is sorted into the following speed grades: -5/-6/-6C/-6I/-6A and -75. The –5 is compliant to the 200MHz/CL3 specification. The -6/-6C/-6I/-6A is compliant to the 166MHz/CL3 specification (the -6I industrial grade, -6A automotive grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the 133MHz/CL3 specification.

FEATURES

• 3.3V ± 0.3V Power Supply

• Up to 200 MHz Clock Frequency

• 2,097,152 Words × 4 banks × 16 bits organization

• Self Refresh Mode

• CAS Latency: 2 and 3

• Burst Length: 1, 2, 4, 8 and full page

• Burst Read, Single Writes Mode

• Byte Data Controlled by LDQM, UDQM

• Auto-precharge and Controlled Precharge

• 4K Refresh cycles / 64 mS

• Interface: LVTTL

• Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

W9812G6IH属于集成电路（IC） > 存储器。华邦电子股份有限公司制造生产的W9812G6IH存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。