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W631GG6KB-15集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
W631GG6KB-15 |
参数属性 | W631GG6KB-15 封装/外壳为96-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 1GBIT PARALLEL 96WBGA |
功能描述 | Double Data Rate architecture: two data transfers per clock cycle |
文件大小 |
3.6109 Mbytes |
页面数量 |
158 页 |
生产厂商 | Winbond Electronics |
企业简称 |
Winbond【华邦电子】 |
中文名称 | 华邦电子股份有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-20 22:58:00 |
W631GG6KB-15规格书详情
GENERAL DESCRIPTION
The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12, 12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).
FEATURES
Power Supply: VDD, VDDQ = 1.5V ± 0.075V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architecture
CAS Latency: 6, 7, 8, 9, 10, 11 and 13
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Auto-precharge operation for read and write bursts
Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
Precharged Power Down and Active Power Down
W631GG6KB-15属于集成电路(IC) > 存储器。华邦电子股份有限公司制造生产的W631GG6KB-15存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
W631GG6KB-15
- 制造商:
Winbond Electronics
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM - DDR3
- 存储容量:
1Gb(64M x 16)
- 存储器接口:
并联
- 电压 - 供电:
1.425V ~ 1.575V
- 工作温度:
0°C ~ 85°C(TC)
- 安装类型:
表面贴装型
- 封装/外壳:
96-TFBGA
- 供应商器件封装:
96-WBGA(9x13)
- 描述:
IC DRAM 1GBIT PARALLEL 96WBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WINBOND |
2016+ |
BGA |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
WINBOND |
2020+ |
FBGA |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
WINBOND/华邦 |
22+ |
BGA |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
WINBOND(华邦) |
2021+ |
WBGA-96 |
499 |
询价 | |||
WINBOND |
21+ |
BGA |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
WINBOND(华邦) |
23+ |
WBGA96 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
WINBOND |
20+ |
BGA |
19570 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
WINBOND/华邦 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
WINBOND |
21+ |
WBGA96 |
50000 |
全新原装 鄙视假货15118075546 |
询价 | ||
WINBOND |
2339+ |
BGA |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 |