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MSAEZ33N20A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

MSAFZ33N20A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features •Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Rev

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

STH33N20

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TPICALRDS(on)=0.073Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATATAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STH33N20FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TPICALRDS(on)=0.073Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATATAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STH33N20FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

STW33N20

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TPICALRDS(on)=0.073Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATATAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STW33N20

N-CHANNELENHANCEMENTMODEPOWERMOSFET

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TPICALRDS(on)=0.073Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATATAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UP

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

详细参数

  • 型号:

    W33N20

  • 制造商:

    STMicroelectronics

供应商型号品牌批号封装库存备注价格
ST
23+
TO-247
3000
全新原装
询价
ST
23+
TO-3P
5000
原装正品,假一罚十
询价
ST
23+
TO-3P
18000
询价
ST
18+
TO-3P
999999
进口全新原装现货
询价
23+
N/A
38160
正品授权货源可靠
询价
ST
21+
TO-247
6000
绝对原裝现货
询价
ST/意法
23+
TO247
50000
全新原装正品现货,支持订货
询价
ST/意法
TO247
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ST/意法
23+
TO247
10880
原装正品,支持实单
询价
ST
23+
TO247
16900
支持样品,原装现货,提供技术支持!
询价
更多W33N20供应商 更新时间2024-4-27 14:02:00