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W29EE512	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-12	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-12B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-70	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-70B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-90	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512P-90B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512Q-70	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512Q-70B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512Q-90	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512Q-90B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-12	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-12B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-70	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-70B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-90	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
W29EE512T-90B	文件：153.67 Kbytes Page：22 Pages	64K X 8 CMOS FLASH MEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope	WinbondWinbond Electronics 华邦电子华邦电子股份有限公司	Winbond
29EE512	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro	SST Silicon Storage Technology，Inc.	SST
GLS29EE512	文件：871.45 Kbytes Page：23 Pages	512Kbit(64Kx8)Page-WriteEEPROM	GreenliantGreenliantsystems,LTD 绿芯	Greenliant
SST29EE512	文件：423.31 Kbytes Page：26 Pages	512Kbit(64Kx8)Page-WriteEEPROM	SST Silicon Storage Technology，Inc.	SST

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详细参数

型号：
W29EE512
制造商：
WINBOND
制造商全称：
Winbond
功能描述：
64K X 8 CMOS FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	W29EE512	WINBOND	06/07+	PLCC	50		询价
深圳市鑫宇杨电子科技有限公司	W29EE512	SST	2020+	PLCC	350000	100%进口原装正品公司现货库存	询价
贸泽芯城（深圳）电子科技有限公司	W29EE512		2020+	PLCC32	10700	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳市力通伟业半导体有限公司	W29EE512P-70	W	02+	PLCC	3	特价热销现货库存100%原装正品欢迎来电订购!	询价
深圳市勤思达科技有限公司	W29EE512P-70	WINBOND	23+	原厂原装	6800	原装无铅,现货库存	询价
深圳市毅创腾电子科技有限公司	W29EE512P-70	WINBOND	23+	PLCC	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市莱克讯科技有限公司	W29EE512T-70	Winbond	2017+	TSSOP	25689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市凯斯宇科技有限公司	W29EE512P-70	WINBOND	2022		1450	原厂原装正品,价格超越代理	询价
深圳市星佑电子有限公司	W29EE512-70	winbond	428	TSSOP	2000	全新原装绝对有货	询价
深圳好佳好科技有限公司	W29EE512T-70	WINBOND	1436+	TSOP	30000	绝对原装进口现货可开增值税发票	询价

更多W29EE512供应商更新时间2024-4-29 16:00:00

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