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W29C020

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-12

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-12A

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-12B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-70

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-70A

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-70B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-90

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-90A

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020-90B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-12

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-12B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-70

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-70B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-90

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020C-90B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020CP12B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020CP70B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

W29C020CP90B

256K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

详细参数

  • 型号:

    W29C020

  • 制造商:

    WINBOND

  • 制造商全称:

    Winbond

  • 功能描述:

    256K X 8 CMOS FLASH MEMORY

供应商型号品牌批号封装库存备注价格
WIN
01+
PLCC
600
询价
BT
23+
PLCC
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
Winbond
23+
DIP/TOSP
5000
原装正品,假一罚十
询价
WINBOND
1815+
DIP
6528
只做原装正品假一赔十为客户做到零风险!!
询价
WINDBOND
21+
PLCC
6000
绝对原裝现货
询价
WINBOND
2021+
DIP
6430
原装现货/欢迎来电咨询
询价
华邦
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
WINBON
2020+
PLCC
10000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
22+
PLCC32
500000
行业低价,代理渠道
询价
BT
2023+环保现货
PLCC
3500
专注军工、汽车、医疗、工业等方案配套一站式服务
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更多W29C020供应商 更新时间2024-5-20 16:00:00