首页 >W25Q80DLUXIE TR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3.3VUniformSectorDualandQuadSerialFlash | GigaDeviceBeijing Zhaoyi Innovation Technology Co., Ltd 兆易创新北京兆易创新科技股份有限公司 | GigaDevice | ||
3.3VUniformSectorDualandQuadSerialFlash | GigaDeviceBeijing Zhaoyi Innovation Technology Co., Ltd 兆易创新北京兆易创新科技股份有限公司 | GigaDevice | ||
3.3VUniformSectorDualandQuadSerialFlash | ELMElm Electronics ELMElm Electronics | ELM | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
3V4M-BITSERIALNORFLASHWITHDUALANDQUADSPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA | ||
UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司 | PUYA |
产品属性
- 产品编号：
W25Q80DLUXIE TR
- 制造商：
Winbond Electronics
- 类别：
集成电路（IC） > 存储器
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 存储器类型：
非易失
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
8Mb（1M x 8）
- 存储器接口：
SPI - 四 I/O
- 写周期时间 - 字，页：
30µs，3ms
- 电压 - 供电：
2.3V ~ 3.6V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
8-UFDFN 裸露焊盘
- 供应商器件封装：
8-USON（2x3）
- 描述：
SPIFLASH, 8M-BIT, 4KB UNIFORM SE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Winbond Electronics |
21+ |
NA |
11200 |
正品专卖,进口原装深圳现货 |
询价 | ||
Winbond Electronics |
21+ |
8-UFDFN |
9925 |
正规渠道/品质保证/原装正品现货 |
询价 | ||
华邦 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
WINBOND |
24+25+/26+27+ |
DFN-8.贴片 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Winbond Electronics |
24+ |
8-UFDFN 裸露焊盘 |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
询价 | ||
华邦 |
2122+ |
USON8(2x3-mm) |
23800 |
全新原装正品现货,优势渠道可含税,假一赔十 |
询价 | ||
WINBOND/华邦 |
2020+ |
SOP8 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
WinbondElectronics |
19+ |
8-WSON(6x5) |
26580 |
存储IC一手货源,极具优势! |
询价 | ||
WINBOND |
18+ |
WSON-8 |
15920 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
WINBOND |
20+ |
WSON8 |
65300 |
一级代理/放心购买! |
询价 |
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