W25Q80BWZPIG说明书PDF资料批发供应第5页-114ic电子网

首页 >W25Q80BWZPIG>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
P25Q80H-SUH-KT-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-SUH-KW-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-SUH-KY-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-IR-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-IT-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-IW-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-IY-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-KR-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-KT-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-KW-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-TSH-KY-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-IR-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-IT-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-IW-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-IY-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-KR-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-KT-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-KW-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80H-UXH-KY-X	文件：3.00538 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA
P25Q80L	文件：2.93905 Mbytes Page：70 Pages	UltraLowPower,8M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q80LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wit	PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半导体(上海)有限公司	PUYA

<<<1 2 3 456 7 >>>

产品属性

产品编号：
W25Q80BWZPIG
制造商：
Winbond Electronics
类别：
集成电路（IC） > 存储器
系列：
SpiFlash®
包装：
托盘
存储器类型：
非易失
存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
8Mb（1M x 8）
存储器接口：
SPI - 四 I/O
写周期时间 - 字，页：
800µs
电压 - 供电：
1.65V ~ 1.95V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
8-WDFN 裸露焊盘
供应商器件封装：
8-WSON（6x5）
描述：
IC FLASH 8MBIT SPI 80MHZ 8WSON

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市富芯乐电子科技有限公司	W25Q80BWZPIG	WINBOND/华邦	23+	WSON8	27000	绝对全新原装现货特价销售,欢迎来电查询	询价
中天科工半导体（深圳）有限公司	W25Q80BWZPIG	WINBOND	存储器	WSON8	41705	WINBOND原装存储芯片-诚信为本	询价
深圳市向鸿伟业电子有限公司	W25Q80BWZPIG	WINBOND/华邦	22++	WSON8	5209	原装正品!诚信经营,实单价优!	询价
深圳市科恒伟业电子有限公司	W25Q80BWZPIG	WINBOND/华邦	22+	WSON8	9850	只做原装正品假一赔十!正规渠道订货!	询价
深圳市莱克讯科技有限公司	W25Q80BWZPIG	WINBOND	2017+	WSON-8	55688	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市凌旭科技有限公司	W25Q80BWZPIG	WINBOND	2016+	WSON-8	4700	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳诚思涵科技有限公司	W25Q80BWZPIG	WINBOND	18+	WSON8	85600	保证进口原装可开17%增值税发票	询价
中科航电(深圳)半导体技术有限公司	W25Q80BWZPIG	WinbondElectronics	19+	8-WSON(6x5)	26580	存储IC一手货源,极具优势!	询价
深圳市百视威讯电子科技有限公司	W25Q80BWZPIG		23+	N/A	85400	正品授权货源可靠	询价
深圳市盈宏半导体科技有限公司	W25Q80BWZPIG	WINBOND	15+P	WSON-8	52880	库存刚更新加微13425146986	询价

更多W25Q80BWZPIG供应商更新时间2024-5-17 16:33:00

产品属性

相关规格书

相关库存