| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
4A180KHz36VBuckDCtoDCConverter | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
CurrentTransducer | LEMLEM Electronics (China) Co., Ltd. 莱姆电子（中国）有限公司 | LEM | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
52A,30V,0.019Ohm,N-ChannelLogicLevel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features •Humidityrange:0to100RH •Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) •Hydrophobicmembrane,IP67rating •14-bitresolution:0.01RH,typical •Independentprogrammableresolutionsettings:8, 10,12,14bits •FastRHresponsetime:1secondtimeconstant, | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensor Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighPerformanceRelativeHumidityandTemperatureSensorModule Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Half-BridgeFredFETandIntegratedDriver Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | InterFET InterFET Corporation | InterFET | ||
PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=12mohm,Id=64A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vivichip |
2018+ |
SOT23-5 |
393428 |
电源IC原装现货有优势 |
询价 | ||
VIVICHIP |
23+ |
SOT23-5 |
33000 |
原装现货 |
询价 | ||
VIVICHIP |
2015+ |
SOT23-5 |
26998 |
专业代理电源DC-DC降压IC,型号齐全,公司优势产品 |
询价 | ||
VIVICHIP |
SOT23-5 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
VIVICHIP |
24+25+/26+27+ |
SOT-23-5 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VIVICHIP |
2310+ |
SOT23-5 |
34960 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
VVP |
21+ |
TO220-5 |
19000 |
只做正品原装现货 |
询价 | ||
VVP |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VVP |
22+ |
TO220 |
3000 |
原装现货假一赔十 |
询价 | ||
VVP |
21+ |
TO220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 |
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