FMMT720

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMT720TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMT720

Identifyyourunshieldedtwisted-pair(UTP)systemswithcolor-codedSnaglessPre-Plugs.

FTA720

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ForLow-FrequencyPowerAmplification andDriverAmplification

H720

SubminiatureKryptonLamswithLens(Clear)-End

HD720

Dustproof

HD720

ThermalGapFiller

PRODUCTDESCRIPTION Tflex™HD700thermalgapfillercombines5W/mKthermalconductivitywithsuperiorpressure versusdeflectioncharacteristics.Thecombinationwillallowminimalstressoncomponents whilealsoyieldinglowthermalresistance.Asaresult,lessmechanicalandthermalstresse

HE720

DashDriveEliteHE720PortableHardDrive

HX720

24-BitADCwithOn-chip3.3VOutputRegulator

IGL720R

LockingDevices

IRF720

N-channelenhancementmodepowermostransistors

IRF720

SEMICONDUCTORS

IRF720

iscN-ChannelMOSFETTransistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

IRF720

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications

IRF720

N-ChannelPowerMOSFETs

IRF720

N-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

IRF720

3.3A,400V,1.800Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRF720

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

IRF720

TRANSISTORSN-CHANNEL

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling

IRF720

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation