首页 >VNV20N07TR-E>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

VNV20N07TR-E

包装:管件 封装/外壳:PowerSO-10 裸露底部焊盘 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB20N07

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07FI,VNB20N07andVNV20N07aremonolithicdevicesmadeusingSTMicroelectronicsVlPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB20N07

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB20N07-E

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB20N07TR-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP20N07

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP20N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

VNP20N07FI

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07FI,VNB20N07andVNV20N07aremonolithicdevicesmadeusingSTMicroelectronicsVlPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP20N07FI

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP20N07FI

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV20N07

OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV20N07

?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP20N07FI,VNB20N07andVNV20N07aremonolithicdevicesmadeusingSTMicroelectronicsVlPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV20N07

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    VNV20N07TR-E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 配电开关,负载驱动器

  • 系列:

    OMNIFET™, VIPower™

  • 包装:

    管件

  • 开关类型:

    通用

  • 输出数:

    1

  • 比率 - 输入:

    1:1

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    55V(最大)

  • 电压 - 供电 (Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    14A

  • 导通电阻(典型值):

    50 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    10-PowerSO

  • 封装/外壳:

    PowerSO-10 裸露底部焊盘

  • 描述:

    IC PWR DRIVER N-CHAN 1

供应商型号品牌批号封装库存备注价格
STM
23+
PowerSO 10
600
询价
STMicroelectronics
24+
10-PowerSO
25717
意法电源管理芯片-原装正品
询价
ST/意法半导体
22+
PowerSO-12
6003
原装正品现货 可开增值税发票
询价
ST/意法半导体
2023
PowerSO-12
6000
公司原装现货/支持实单
询价
ST(意法半导体)
23+
PowerSO-10
1330
特价优势库存质量保证稳定供货
询价
ST(意法半导体)
23+
PowerSO-10
5486
百分百原装正品,可原型号开票
询价
ST
1728+
?
7500
只做原装进口,假一罚十
询价
STMicroelectronics
23+
10-PowerSO
66800
进口原装现货假一罚十
询价
STMicroelectronics
21+
10-PowerSO
36500
一级代理/放心采购
询价
ST/意法
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多VNV20N07TR-E供应商 更新时间2024-5-30 17:30:00