首页>VBM1201M_V01>规格书详情
VBM1201M_V01中文资料PDF规格书
VBM1201M_V01规格书详情
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
首页>VBM1201M_V01>规格书详情
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch