首页 >VBE165R02S>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
VBE165R02S | N-Channel 650V (D -S) Super Junction Power MOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)SuperJunctionPowerMOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)SuperJunctionPowerMOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)SuperJunctionPowerMOSFET FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2112+ |
TO252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
VBSEMI-微碧 |
24+25+/26+27+ |
车规-场效应管 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
23+ |
N/A |
58800 |
一级代理放心采购 |
询价 | |||
VBSEMI/台湾微碧 |
24+23+ |
TO252 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
VB |
23+ |
TO-252 |
8000 |
原装正品 |
询价 | ||
VBSEMI |
23+ |
TO-252 |
779 |
只做原装 特价 一片起送 |
询价 | ||
VBSEMI |
21+ |
TO-252 |
1421 |
原装保证,实单支持 |
询价 | ||
VBsemi台湾微碧 |
21+ |
TO-252 |
17071 |
原装现货,假一罚十 |
询价 | ||
VBsemi(微碧) |
23+ |
TO2523 |
5000 |
诚信服务,绝对原装原盘 |
询价 | ||
IXYS |
22+ |
ECOPAC1 |
9000 |
原厂渠道,现货配单 |
询价 |
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