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19N10

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10G-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L

100VN-ChannelMOSFET

DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10L-TMS-T

N-CHANNELLOGICLEVELENHANCEMENTMODE

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

19N10V

100VN-ChannelMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

FQB19N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-ChannelQFET짰MOSFET100V,15.6A,100m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

100VN-ChannelMOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

UMWUMW

友台友台半导体

FQD19N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD19N10L

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

FQD19N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
UTC
22+
TO-251
650
长源创新-只做原装----假一赔十
询价
UTC
22+23+
TO-251
23036
绝对原装正品全新进口深圳现货
询价
UTC
19+
TO-251
9860
一级代理
询价
23+
N/A
49100
正品授权货源可靠
询价
UTC
2020+
TO-251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
UTC
21+
TO-251
629
原装现货假一赔十
询价
UTC
22+
TO-251
32350
原装正品 假一罚十 公司现货
询价
UTC/友顺
23+
TO-251
50000
全新原装正品现货,支持订货
询价
UTC
19+ 20+
TO-251
32350
深圳存库原装现货
询价
UTC/友顺
2011+
TO-251
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
更多UTC19N10G供应商 更新时间2024-4-30 13:20:00