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UT2312G-AE3-R

20V N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION TheUT2312usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)≤33mΩ@VGS=4.5V,ID=5.0A *RDS(ON)≤40mΩ@VGS=2.5V,

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UT2312G-AE3-R

N-CHANNEL ENHANCEMENT MODE MOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2312

BandpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

2312

Pneumaticmuffler

FESTOFesto Corporation.

费斯托公司德国FESTO费斯托(中国)有限公司

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2312-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2312-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Inc.

伯恩斯(邦士)

2312T

PhotoelectronicSmokedetectorwithElectronicHeatSensing

SYSTEMSENSORSystemsensor advanced ideas.

Systemsensor advanced ideas.

AM2312

MOSFET20VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AM2312N

N-Channel20-V(D-S)MOSFET

AnalogPower

Analog Power

AP2312GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

APM2312

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

APM2312A

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

APM2312AC-TR

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

ANPECAnpec Electronics Corp

茂达电子

BC2312

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

BLM2312

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

CES2312

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CES2312

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    UT2312G

  • 制造商:

    UTC-IC

  • 制造商全称:

    UTC-IC

  • 功能描述:

    20V N-CHANNEL ENHANCEMENT MODE MOSFET

供应商型号品牌批号封装库存备注价格
UTC/友顺
SOT23
7906200
询价
UTC
15+
SOT23
2900
现货-ROHO
询价
UTC
1742+
SOT23-3
98215
只要网上有绝对有货!只做原装正品!
询价
UTC
23+
53000
原装正品现货
询价
23+
N/A
90750
正品授权货源可靠
询价
UTC
2018+
SOT23-3
9625
MOS管优势产品热卖中
询价
UTC
20+
SOT23
43000
原装优势主营型号-可开原型号增税票
询价
UTC
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
UTC
21+
SOT-23
6000
绝对原裝现货
询价
UTC/友顺
23+
SOT23-3
333652
MOS管优势产品热卖中
询价
更多UT2312G供应商 更新时间2024-4-30 17:52:00