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UPD488448FF-C71-45-DQ2中文资料PDF规格书

UPD488448FF-C71-45-DQ2
厂商型号

UPD488448FF-C71-45-DQ2

功能描述

128 M-bit Direct Rambus??DRAM

文件大小

1.9028 Mbytes

页面数量

30

生产厂商 Renesas Electronics America
企业简称

NEC瑞萨

中文名称

瑞萨科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-5-25 22:58:00

UPD488448FF-C71-45-DQ2规格书详情

Description

The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

The µPD488448 is 128M-bit Direct Rambus DRAM (RDRAM), organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 bus efficiency. The Direct RDRAM’s thirty-two banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking.

The µPD488448 is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5 volt supply.

Features

• Highest sustained bandwidth per DRAM device

- 1.6 GB/s sustained data transfer rate

- Separate control and data buses for maximized efficiency

- Separate row and column control buses for easy scheduling and highest performance

- 32 banks: four transactions can take place simultaneously at full bandwidth data rates

• Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

• Advanced power management:

- Multiple low power states allows flexibility in power consumption versus time to transition to active state

- Power-down self-refresh

• Overdrive current mode

• Organization: 1 Kbyte pages and 32 banks, x 16

• Uses Rambus Signaling Level (RSL) for up to 800 MHz operation

• Package : 62-pin TAPE FBGA (µBGA) and 62-pin PLASTIC FBGA (D2BGA (Die Dimension Ball Grid Array) )

供应商 型号 品牌 批号 封装 库存 备注 价格
NEC
2016+
SOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
NEC
23+
QFP100
20000
全新原装假一赔十
询价
NEC
20+
QFP
500
样品可出,优势库存欢迎实单
询价
NEC
2023+
QFP
50000
原装现货
询价
NEC
23+
NA
380
专做原装正品,假一罚百!
询价
NEC
23+
QFP
4500
全新原装、诚信经营、公司现货销售!
询价
NEC
1816+
.
6523
科恒伟业!只做原装正品,假一赔十!
询价
NEC
2023+
TQFP-100
3550
全新原厂原装产品、公司现货销售
询价
NEC
00+
QFP
669
询价
NEC
2000
QFP
386
原装现货海量库存欢迎咨询
询价