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UPD45128163G5-A75

128M-bit Synchronous DRAM 4-bank, LVTTL

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD45128163G5-A75-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD45128163G5-A75I-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75I-9JF-E

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75LI-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75LI-9JF-E

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128163ishigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemory,organizedas2,097,152×16×4(word×bit×bank).ThesynchronousDRAMachievedhigh-speeddatatransferusingthepipelinearchitecture.Allinputsandoutputsaresynchronizedwiththepositive

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75LT-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75T-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

Description TheµPD45128441,45128841,45128163arehigh-speed134,217,728-bitsynchronousdynamicrandom-accessmemories,organizedas8,388,608×4×4,4,194,304×8×4,2,097,152×16×4(word×bit×bank),respectively. ThesynchronousDRAMsachievedhigh-speeddatatransferusingthepi

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75-9JF-E

128M-bit Synchronous DRAM 4-bank, LVTTL

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75A-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL

ELPIDAElpida Memory

美光科技美光科技股份有限公司

UPD45128163G5-A75L-9JF

128M-bit Synchronous DRAM 4-bank, LVTTL

ELPIDAElpida Memory

美光科技美光科技股份有限公司

详细参数

  • 型号:

    UPD45128163G5-A75

  • 制造商:

    Elpida Memory Inc

  • 功能描述:

    8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

供应商型号品牌批号封装库存备注价格
NEC
21+
TSOP54
6000
绝对原裝现货
询价
NECSingapore
2021++
原装
100000
进品原装,现货特卖
询价
ELPEDA
2023+
TSSOP
6895
原厂全新正品旗舰店优势现货
询价
NEC
2023+
TSSOP
50000
原装现货
询价
ELPIDA尔
23+
TSOP54
8000
只做原装现货
询价
NEC
22+
TSOP-54
4650
询价
尔必达(ELPIDA)
2013+
TSOP-54
18998
专业SDRAM代理销售
询价
NEC
03+
SOP
5000
全新原装进口自己库存优势
询价
NEC
23+
TSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
ELPIDA
TSOP
156
询价
更多UPD45128163G5-A75供应商 更新时间2024-9-20 10:13:00