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UPD44164182B

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E33-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E33-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E33Y-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E33Y-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E35-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E35-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E35Y-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E35Y-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E40-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E40-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E40Y-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E40Y-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E50-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E50-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E50Y-EQ3

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182BF5-E50Y-EQ3-A

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •Twoinpu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD44164182A-A

MOSINTEGRATEDCIRCUIT

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGApackage(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Pipelineddoubledatarateoperation •Commondatainput/outputbus •Two-tickburstforlowDDRtransactionsize •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
NEC
2021+
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
RENESAS/瑞萨
标准封装
57598
一级代理原装正品现货期货均可订购
询价
RENESAS
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
RENESAS/瑞萨
23+
NA
8729
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
询价
RENESAS/瑞萨
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
RENESAS/瑞萨
2022+
NA
8600
原装正品,欢迎来电咨询!
询价
RENESAS/瑞萨
22+
N/A
8729
现货,原厂原装假一罚十!
询价
NEC
BGA
6000
原装现货,长期供应,终端可账期
询价
RENESAS/瑞萨
13+
NA
8729
普通
询价
RENESAS/瑞萨
22+
NA
35000
原装现货,假一罚十
询价
更多UPD44164182B供应商 更新时间2024-5-28 15:00:00